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HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC518 is ideal for use as a LNA or driver amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios & VSAT * Test Equipment and Sensors * Military & Space
Features
Noise Figure: 3.0 dB Gain: 15 dB OIP3: 23 dBm Single Supply: +3V @ 65 mA 50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC518 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 20 to 32 GHhz frequency range. The HMC518 provides 15 dB of small signal gain, 3.0 dB of noise figure and has an output IP3 greater than 23 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.
Electrical Specifications, TA = +25 C, Vdd 1, 2, 3 = +3V
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 9 12 Min. Typ. 20 - 28 15 0.015 3.0 13 15 12 14 23 65 9 0.025 4.0 10 Max. Min. Typ. 28 - 32 13 0.015 3.5 10 10 12 16 25 65 0.025 5.5 Max. Units GHz dB dB/ C dB dB dB dBm dBm dBm mA
1 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
Broadband Gain & Return Loss
20 15 10 5 GAIN (dB) 0 -5 -10 -15 -20 -25 16 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
Gain vs. Temperature
20 18 16 14 GAIN (dB)
1
AMPLIFIERS - CHIP
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S21 S11 S22
12 10 8 6 4 2 0 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
+25C +85C -55C
Input Return Loss vs. Temperature
0
+25C +85C -55C
Output Return Loss vs. Temperature
0
-4 RETURN LOSS (dB)
-5 RETURN LOSS (dB)
-8
-10
-12
-15
+25C +85C -55C
-16
-20
-20 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
-25 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
Output IP3 vs. Temperature
35 30
+25C +85C -55C
OIP3 (dBm)
25 20 15 10 5 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
+25C +85C -55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Temperature
20
Psat vs. Temperature
20
16 P1dB (dBm) Psat (dBm)
16
12
12
+25C +85C -55C
8
+25C +85C -55C
8
4
4
0 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
0 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
Power Compression @ 29 GHz
20 Pout (dBm), GAIN (dB), PAE(%)
+25C +85C -55C
16
12
Pout Gain PAE
8
4
0 -20
-15
-10
-5
0
5
INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 29 GHz
20 18 GAIN (dB), P1dB (dBm) 16 Gain 14 12 10 8 6 4 2 0 2.5 3 Vdd (Vdc) Noise Figure P1dB 10 9 8 7 6 5 4 3 2 1 0 3.5 NOISE FIGURE (dB)
1 - 170
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 61 65 69
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFin)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 29 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +7 dBm 175 C 2.65 W 34 C/W -65 to +150 C -55 to +85 C Class 1A
1
AMPLIFIERS - CHIP
1 - 171
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard GP-1 Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 20 - 32 GHz. Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 F are required.
5
RFOUT
This pad is AC coupled and matched to 50 Ohms from 20 - 32 GHz. These pads must be connected to RF/DC ground for proper operation.
6, 7, 8
G3, 2, 1
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
Note: G1, G2 and G3 must be connected to RF/DC ground.
1 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum < 0.31 mm (<12 mils) is recommended.
0.102mm (0.004") Thick GaAs MMIC
3 mil Ribbon Bond 0.076mm (0.003")
1
AMPLIFIERS - CHIP
1 - 173
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004") Thick GaAs MMIC
3 mil Ribbon Bond 0.076mm (0.003")
RF Ground Plane
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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